FQA23N60 N-Channel MOSFET Transistor 600V, 23A TO-3PN

FQA23N60 N-Channel MOSFET Transistor 600V, 23A TO-3PN

The FQA23N60 is an N-Channel MOSFET transistor designed for high voltage applications. Built with Fairchild Semiconductor’s proprietary planar stripe and DMOS technology, it is tailored to reduce on-state resistance and offer superior switching performance. The transistor has a 600V drain-source voltage and can handle a continuous drain current of 23A at 25°C, with a maximum resistance of 240 mΩ under certain conditions. It is engineered to function in a variety of demanding power applications.

This transistor is suitable for switched mode power supplies (SMPS), active power factor correction (PFC), and electronic lamp ballasts. It is known for its low gate charge and reverse transfer capacitance, which contribute to improved efficiency and faster switching. The FQA23N60’s advanced avalanche energy strength makes it reliable in situations where high energy absorption is necessary, ensuring stable performance under transient conditions.

The FQA23N60 is packaged in a TO-3PN form factor, ensuring excellent thermal management and ease of integration in various power electronic systems. Its robust design supports high efficiency and reliability, making it an ideal choice for applications where performance, power, and heat management are critical.

Features:

• 23A drain current at 600V.
• Low RDS(on): 240 mΩ (max).
• Low gate charge: 110nC.
• Low Crss (reverse transfer capacitance): 56pF.
• 100% avalanche tested.
• Supports high energy absorption for improved system reliability.

Specifications:

Applications:

• Switched Mode Power Supplies (SMPS).
• Active Power Factor Correction (PFC).
• Electronic Lamp Ballasts.

Package Contents:

• 1x FQA23N60 N-Channel MOSFET Transistor 600V, 23A TO-3PN

Datasheet