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Power Efficiency: FQA80N60 N-Channel MOSFET for High-Performance Switching
Features:
- High-Speed Switching: Enables rapid operation with minimal energy loss.
- Low Gate Charge: 250nC, facilitating efficient drive requirements.
- Low On-Resistance: Ensures efficient conduction with minimal power loss.
- High Input Impedance: Simplifies drive requirements.
- TO-3P Package: Provides robust construction and efficient heat dissipation.
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-3P |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 600 V |
| Id – Continuous Drain Current: | 80 A |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4.5 V |
| Qg – Gate Charge: | 250 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 195 W |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Rise Time: | 50 ns |
| Transistor Type: | 1 N-Channel |
Applications:
- Power supplies
- Motor controls
- DC-DC converters
- Inverters
- Audio amplifiers
Document:
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