FQP40N03 N-Channel MOSFET Transistor
he FQP40N03 N-Channel MOSFET Transistor, a versatile power component optimized for low-voltage, high-speed switching in electronic circuits. Leveraging enhancement mode technology, this device offers low on-state resistance and minimal gate charge, ensuring efficient operation and reduced heat dissipation in compact designs. Ideal for engineers and hobbyists alike, it provides reliable performance in power management tasks where speed and efficiency are critical, helping to lower system costs and improve energy usage.
Features:
- Low static drain-to-source on-resistance for efficient power handling.
- Low gate charge for faster switching and reduced drive power.
- High forward transconductance for improved amplification.
- Fully characterized for inductive switching and peak current capabilities.
- Wide gate threshold voltage range for flexible driving.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (VDSS) | 30V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 40A |
| Pulsed Drain Current (IDM) | 170A |
| Static Drain-Source On-Resistance (RDS(on)) | 17mΩ |
| Gate Threshold Voltage (VGS(th)) | 1V to 3V |
| Input Capacitance (Ciss) | 800pF |
| Total Gate Charge (Qg) | 17nC |
| Turn-On Delay Time (td(on)) | 7.2ns |
| Rise Time (tr) | 60ns |
| Turn-Off Delay Time (td(off)) | 22.5ns |
| Fall Time (tf) | 10ns |
| Operating Temperature Range (TJ) | -55°C to 150°C |
Pin Configuration:
Applications:
- Fast switching circuits in power supplies.
- Motor control and drive systems.
- DC-DC converters and voltage regulators.
- Load switches in battery-powered devices.
- Inductive load switching in automotive electronics.
Package Include:
1x FQP40N03 N-Channel MOSFET Transistor.
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