FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F

FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F

The FQPF20N60C is an N-Channel enhancement mode power MOSFET designed for high-voltage switching applications. Fabricated using advanced SuperFET® technology from ON Semiconductor , it features a maximum drain-source voltage of 600V and a continuous drain current of 20A. With a low on-state resistance  and ultra-low gate charge, it offers excellent switching performance and efficiency. The TO-220F package provides full encapsulation for enhanced thermal insulation, making it suitable for applications such as switched-mode power supplies, LCD and plasma TV power circuits, and industrial power systems. Its robust design supports high-energy pulses in avalanche and commutation modes, ensuring reliability in demanding environments.

Features:

• The  FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance.
• Robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
• These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Pin Configurations:

Specifications:

Applications:

• Industrial power applications.
• UPS.
• Solar Inverter.
• AC-DC Power Supply.
• DC-DC Converters.
• Server/Telecom power.
• lighting ballasts.
• Motion control.

Datasheet:     

FQPF20N60C