FQPF7N80C N-Channel MOSFET Transistor To-220F

FQPF7N80C is a 800V, 6.6A N-Channel MOSFET in TO-220F package. Advanced QFET® tech enables high-efficiency switching for power supplies and PFC

20.00 EGP

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Availability: In Stock
SKU:3496300062614
FQPF7N80C N-Channel MOSFET Transistor To-220F

The FQPF7N80C N-Channel MOSFET Transistor TO-220F is a robust enhancement-mode power MOSFET designed for high-voltage, high-efficiency switching applications. this device integrates proprietary DMOS technology to deliver excellent on-state resistance performance, high avalanche energy tolerance, and reliable switching characteristics suited for demanding power conversion and control systems.

Features:
  • N-Channel enhancement mode for efficient high-side switching.
  • Low on-state resistance of 1.9Ω maximum at VGS=10V for reduced power losses.
  • Low gate charge of typically 27nC for faster switching and lower drive power.
  • Low Crss of typically 10pF for improved high-frequency performance.
Specifications:
Parameter Value
Drain-Source Breakdown Voltage 800V
Gate-Source Voltage ±30V
Continuous Drain Current 6.6A
Pulsed Drain Current 26.4A
Power Dissipation 56W
On-State Resistance (Max) 1.9Ω
Gate Charge (Typical) 27nC
Input Capacitance (Typical) 120pF
Output Capacitance (Typical) 10pF
Reverse Transfer Capacitance (Typical) 10pF
Gate Threshold Voltage (Max) 5V
Operating Junction Temperature -55-150°C
Pin Configuration:

Applications:
  • Switched mode power supplies for efficient energy conversion.
  • Active power factor correction circuits in AC-DC converters.
  • Electronic lamp ballasts for lighting systems.
  • LCD and LED television power management.
  • Desktop PC power supplies.
  • AC-DC merchant power supplies for consumer electronics.
Package Include:

1x FQPF7N80C N-Channel MOSFET Transistor To-220F.

Datasheet:

FQPF7N80C

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