FS10KM Power MOSFET Transistor 60V 10A

FS10KM is a 60V, 10A N-channel MOSFET with low on-resistance and fast recovery, ideal for high-speed switching in motor control and power electronic circuits.

50.00 EGP

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SKU:3496300121229
FS10KM Power MOSFET Transistor 60V 10A

The FS10KM is a high-speed switching N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed to operate at 60V with a current capacity of up to 10A. It is built to handle medium to high power applications, including motor control, lamp control, and solenoid control. The transistor is housed in a TO-220FN package, ensuring efficient thermal management.

This MOSFET features low on-state resistance (rDS(on) max of 78mΩ), which allows for efficient power dissipation and minimizes heat generation. Additionally, it integrates a fast recovery diode, enhancing its performance in switching applications. The device is designed for quick switching with a typical recovery time of 55ns, making it suitable for high-speed applications like DC-DC converters and other power electronic circuits.

The FS10KM is engineered to perform reliably in a wide range of temperatures, from -55°C to +150°C. With an isolation voltage rating of 2000V, it ensures safe operation even under high voltage conditions. The MOSFET is optimized for both pulsed and continuous current loads, making it versatile for various industrial and commercial uses, with robust thermal and electrical characteristics.

Features:
  • Low on-resistance (rDS(on) = 78mΩ).
  • 60V Drain-Source Voltage (VDS).
  • 10A continuous drain current (ID).
  • Integrated fast recovery diode with 55ns recovery time.
  • Gate-Source Voltage (VGS) rating of ±20V.
  • High-speed switching for use in motor control and DC-DC converters.
  • Robust thermal and electrical characteristics for high-efficiency performance.
  • Isolation voltage of 2000V for enhanced safety.
Specifications:
Parameter Value
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 10A
Pulsed Drain Current (IDM): 40A
On-Resistance (rDS(on)): 78mΩ
Forward Transfer Admittance (yfs): 9 S
Gate-Source Threshold Voltage (VGS(th)):                 2.0V
Capacitance (Ciss, Coss, Crss): 600pF, 180pF, 60pF
Thermal Resistance (Rth(ch-c)): 2.0°C/W
Package: TO-220FN
Weight: 2.0g
Applications:
  • Motor Control.
  • Lamp Control.
  • Solenoid Control.
  • DC-DC Converters.
  • Power Switching Systems.
Package includes:
  • 1x FS10KM Power MOSFET Transistor 60V 10A
Datasheet
Weight 4 g
Dimensions 10 × 5 × 30 mm

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