G100N60FDK IGBT Power Transistor
The G100N60FDK is a rugged IGBT (Insulated-Gate Bipolar Transistor) designed for 600 V blocking and roughly 100 A continuous current. As an IGBT, it combines a MOS-gate input with a bipolar conduction layer to achieve both fast switching and low conduction loss. It is housed in a TO‑247‑3 (3-pin) package with an exposed back tab (collector) and is built on Trench/Field-Stop semiconductor technology for optimal performance. This advanced field-stop design yields very low saturation voltage on the order of ~1.8 V at 100 A and very low turn-off energy, minimizing power loss.
Features:
- 600V collector-emitter voltage rating.
- 100A continuous collector current.
- High-speed switching capability.
- Low conduction loss for energy efficiency.
Specifications:
| Parameter | Value |
|---|---|
| Collector–Emitter Voltage (V_CE) | 600 V |
| Continuous Collector Current | 100 A |
| V_CE(sat) (typ. @100 A, 25 °C) | 1.85 V |
| Gate–Emitter Threshold (V_GE(th)) | ~5.1 V (typ) |
| Operating Junction Temperature | –40…+175 °C |
| Package | TO‑247‑3 |
Pin Configuration:
- Pin1-gate.
- Pin2&backside-collector.
- Pin3-emitter.
Applications:
- un interruptible power supplies.
- welding converters.
- converters with high switching frequency.
Package Include:
- 1x G100N60FDK IGBT Power Transistor.
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