G60N60FUK N-Channel Transistor IGBT 600V 60A TO-247
The G60N60FUK IGBT is commonly used as a high-voltage, high-current switching device in photovoltaic inverters, UPS units.
95.00 EGP
Buy NowG60N60FUK N-Channel Transistor IGBT 600V 60A TO-247
The G60N60FUK (MLG60N60FUK) is a rugged, trench field-stop (T-FS) IGBT designed for demanding power-switching applications. It combines low saturation voltage and optimized switching characteristics with a fast recovery anti-parallel diode, delivering efficient conduction and low switching losses. Available in TO-247, TO-3PF and TO-3PN packages, the device supports heavy pulse and continuous currents and includes robust short-circuit and thermal capability for reliable operation in industrial power electronics such as PV inverters, UPS systems, boost converters and other medium- to high-power, high-frequency applications.
Features:
- Trench Field-Stop (T-FS) IGBT technology.
- Low VCE(sat) (low conduction loss).
- Fast switching performance.
- Positive temperature coefficient for parallelability.
- Integrated fast recovery anti-parallel diode.
- RoHS compliant.
- Multiple rugged power packages (TO-247, TO-3PF, TO-3PN).
Specifications:
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES): | 600V |
| Collector Current (IC) @ TC = 100°C (continuous): | 60A |
| Collector Current (IC) @ TC = 25°C (continuous): | 120A |
| Pulsed Collector Current (ICM): | 240A (pulse, limited by TJmax) |
| Gate-Emitter Voltage (VGE): | ±30V (max) |
| Power Dissipation (PD) @ TC=25°C: | 375W |
| Short-circuit withstand time (tSC): | 5µs (VGE=15 V, VCC ≤ 400 V; limited number of events) |
| Max junction / storage temperature (TJmax, Tstg): | 175°C / –55 to 175°C |
| Input Capacitance (Ciss): | ~3036pF |
| Gate charge (QG): | ~137nC |
| Package: | TO-247 |
| Items | Values (mm) | |
|---|---|---|
| MIN | MAX | |
| A | 4.90 | 5.16 |
| A1 | 2.27 | 2.53 |
| A2 | 1.85 | 2.11 |
| B | 1.07 | 1.33 |
| B1 | 1.90 | 2.41 |
| B2 | 1.75 | 2.15 |
| B3 | 2.87 | 3.38 |
| B4 | 2.87 | 3.13 |
| C | 0.55 | 0.68 |
| D | 20.82 | 21.10 |
| D1 | 16.25 | 17.65 |
| D2 | 1.05 | 1.35 |
| E | 15.70 | 16.03 |
| E1 | 13.10 | 14.15 |
| E2 | 3.68 | 5.10 |
| E3 | 1.68 | 2.60 |
| e | 5.44 | |
| L | 19.80 | 20.31 |
| L1 | 4.17 | 4.47 |
| ØP | 3.50 | 3.70 |
| Q | 5.49 | 6.00 |
| S | 6.04 | 6.30 |
Pinout:
| Pin Number | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET conduction |
| 2 | Drain (D) | Connected to load and positive supply |
| 3 | Source (S) | Connected to ground or common |
Applications:
- Photovoltaic inverter power stages.
- Uninterruptible Power Supplies (UPS).
- Boost / flyback converters and PFC stages.
- High-frequency motor drives and traction inverters (medium power).
- Industrial power electronics and switching modules.
- Hard-switching or soft-switching converter topologies requiring robust IGBTs.
Packages:
- 1x G60N60FUK N-Channel Transistor IGBT 600V 60A TO-247.
Documents:
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