Power IGBT Transistor G80N60 TO-247 600V 80A
The G80N60 is a 600V, 80A ultrafast IGBT with low saturation voltage and high-speed switching, ideal for motor control and inverters.
120.00 EGP
In stockSKU 3496300111541
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Power IGBT Transistor G80N60 TO-247 600V 80A
The Power IGBT Transistor G80N60 TO-247 600V 80A is a high-performance ultrafast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient switching and high current handling, this device combines a 600 V blocking voltage with an 80 A continuous collector current capability. The TO-247 package facilitates easy integration into various power electronic systems.
Features:
- High-Speed Switching: Enables rapid operation with minimal energy loss.
- Low Saturation Voltage: VCE(sat) of 2.1V at 40A collector current.
- High Input Impedance: Simplifies drive requirements.
- Integrated Fast Recovery Diode: Reverse recovery time (trr) of 50ns.
Specifications:
- Collector-Emitter Breakdown Voltage (VCE(sus)): 600V.
- Gate-Emitter Threshold Voltage (VGE(th)): 6V.
- Maximum Collector Current (IC): 80A at 25°C.
- Maximum Gate-Emitter Voltage (VGE): ±20V.
- Thermal Resistance Junction-to-Case (RθJC): 0.5°C/W.
- Operating Junction Temperature (TJ): -55°C to +150°C.
Pin Configuration:
Applications:
- AC and DC motor controls.
- General-purpose inverters.
- Robotics and servo controls.
Data Sheet:
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