IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs

IR2111 high-voltage gate driver IC for MOSFETs and IGBTs is Compact and supporting 600V operation, fast switching, reliable performance in power control systems.

90.00 EGP

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IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs

The IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs is a high-voltage, high-speed power driver IC designed to control both high-side and low-side N-channel MOSFETs or IGBTs. It provides independent gate drive outputs with built-in level shifting and protection, allowing efficient switching in half-bridge and full-bridge power configurations. The device supports up to 600V operation with fast propagation delay, making it ideal for high-performance applications such as motor control, DC-DC converters, UPS systems, and switching power supplies. Its compact design ensures reliable operation, reduced switching losses, and excellent noise immunity in demanding environments.

Features
  • High and low side driver configuration for N-channel MOSFETs or IGBTs.
  • Floating channel designed for bootstrap operation up to 600V.
  • High output current drive capability (up to 2A peak).
  • Undervoltage lockout protection for both high and low side.
  • Fast switching speed with matched propagation delays.
  • Logic input compatible with standard TTL and CMOS levels.
  • Built-in dead-time control for safe switching operation.
  • Low quiescent current for efficient performance.
  • Compact 8-pin DIP or SOIC package for easy integration.
  • Ideal for motor drivers, DC-DC converters, UPS, and power inverters.
Pin Configuration

Specifications
Category Parameter Description / Value
General Part Number IR2111
Type Integrated Circuit (IC)
Driver Type High and Low Side Gate Driver (Half-Bridge)
Compatible Devices N-Channel MOSFETs and IGBTs
Electrical Operating Supply Voltage 15 V
Min Supply Voltage 10 V
Max Supply Voltage 20 V
High-Side Floating Supply Voltage (VB) Up to 600 V
Max Output Current 500 mA
Output Current (Peak) ±2 A
Logic Input Voltage Range TTL/CMOS Compatible
Power Dissipation 1 W
Timing Characteristics Propagation Delay (Typical) 950 ns
Rise Time 130 ns
Fall Time 65 ns
Turn-On Delay Time 30 ns
Turn-Off Delay Time 30 ns
Protection & Control Under voltage Lockout (UVLO) Yes (High and Low Side)
Dead Time Control Built-in
Thermal Min Operating Temperature -40 °C
Max Operating Temperature +125 °C
Physical Case / Package DIP
Mount Through Hole
Number of Pins 8
Functional Number of Drivers 2
Number of Outputs 2
Operating Frequency Up to 500 kHz
Mechanical Dimensions

Applications
  • DC-DC converters and switch-mode power supplies (SMPS).
  • Single-phase and three-phase motor control circuits.
  • Uninterruptible power supply (UPS) systems.
  • Half-bridge and full-bridge inverter designs.
  • Induction heating and lighting ballasts.
  • Renewable energy inverters (solar, wind).
  • Power factor correction (PFC) circuits.
  • High-efficiency power switching and control systems.
Package Contents
  • 1 x  IR2111 High-Low Side Gate Driver for Power MOSFETs & IGBTs
Datasheet

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