IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs
IR2111 high-voltage gate driver IC for MOSFETs and IGBTs is Compact and supporting 600V operation, fast switching, reliable performance in power control systems.
The IR2111 High-Low Side Gate Driver for Power MOSFETs / IGBTs is a high-voltage, high-speed power driver IC designed to control both high-side and low-side N-channel MOSFETs or IGBTs. It provides independent gate drive outputs with built-in level shifting and protection, allowing efficient switching in half-bridge and full-bridge power configurations. The device supports up to 600V operation with fast propagation delay, making it ideal for high-performance applications such as motor control, DC-DC converters, UPS systems, and switching power supplies. Its compact design ensures reliable operation, reduced switching losses, and excellent noise immunity in demanding environments.
Features
High and low side driver configuration for N-channel MOSFETs or IGBTs.
Floating channel designed for bootstrap operation up to 600V.
High output current drive capability (up to 2A peak).
Undervoltage lockout protection for both high and low side.
Fast switching speed with matched propagation delays.
Logic input compatible with standard TTL and CMOS levels.
Built-in dead-time control for safe switching operation.
Low quiescent current for efficient performance.
Compact 8-pin DIP or SOIC package for easy integration.
Ideal for motor drivers, DC-DC converters, UPS, and power inverters.
Pin Configuration
Specifications
Category
Parameter
Description / Value
General
Part Number
IR2111
Type
Integrated Circuit (IC)
Driver Type
High and Low Side Gate Driver (Half-Bridge)
Compatible Devices
N-Channel MOSFETs and IGBTs
Electrical
Operating Supply Voltage
15 V
Min Supply Voltage
10 V
Max Supply Voltage
20 V
High-Side Floating Supply Voltage (VB)
Up to 600 V
Max Output Current
500 mA
Output Current (Peak)
±2 A
Logic Input Voltage Range
TTL/CMOS Compatible
Power Dissipation
1 W
Timing Characteristics
Propagation Delay (Typical)
950 ns
Rise Time
130 ns
Fall Time
65 ns
Turn-On Delay Time
30 ns
Turn-Off Delay Time
30 ns
Protection & Control
Under voltage Lockout (UVLO)
Yes (High and Low Side)
Dead Time Control
Built-in
Thermal
Min Operating Temperature
-40 °C
Max Operating Temperature
+125 °C
Physical
Case / Package
DIP
Mount
Through Hole
Number of Pins
8
Functional
Number of Drivers
2
Number of Outputs
2
Operating Frequency
Up to 500 kHz
Mechanical Dimensions
Applications
DC-DC converters and switch-mode power supplies (SMPS).
Single-phase and three-phase motor control circuits.
Uninterruptible power supply (UPS) systems.
Half-bridge and full-bridge inverter designs.
Induction heating and lighting ballasts.
Renewable energy inverters (solar, wind).
Power factor correction (PFC) circuits.
High-efficiency power switching and control systems.
Package Contents
1 x IR2111 High-Low Side Gate Driver for Power MOSFETs & IGBTs
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