IRF1404 N-Channel Power MOSFET Transistor 40V 162A TO-220
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced Process Technology.
- Ultra Low On-Resistance.
- Dynamic dv/dt Rating.
- 175°C Operating Temperature.
- Fast Switching.
- Fully Avalanche Rated.
Specifications
| Parameter | Value |
|---|---|
| Model | IRF1404 |
| Transistor Polarity | N-Channel |
| Drain-to-Source Voltage (VDSS) | 40V |
| Continuous Drain Current (ID @ TC=25 °C) | 162A |
| Pulsed Drain Current (IDM) | 650A |
| Power Dissipation (PD @ TC=25 °C) | 200W |
| Static On-Resistance (RDS(ON) @ VGS=10 V) | 0.0035Ω – 0.004Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0V – 4.0V |
| Single-Pulse Avalanche Energy (EAS) | 519mJ |
| Gate-to-Source Voltage (VGS) | ±20V |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.75 °C/W |
| Operating Junction Temperature Range | –55 °C to +175 °C |
| Storage Temperature Range | –55 °C to +175 °C |
| Package Dimensions | 10.54 mm x 15.24 mm x 4.69 mm |
Applications
- High-current DC–DC converters.
- Automotive power management and motor drives.
- Synchronous rectification in switch-mode power supplies.
- Industrial motor control and power inverters.
- Uninterruptible power supply (UPS) systems.
Package Contents
- 1x IRF1404 N-Channel Power MOSFET Transistor 40V 202A TO-220.
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