IRF1404PBF N-Channel Power MOSFET Transistor 40V 162A TO-220

A 40V, 162A N-Channel MOSFET featuring ultra-low on-resistance and full avalanche rating in a TO-220 package, designed for high-efficiency automotive and industrial power switching.

40.00 EGP

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Availability: In Stock
SKU:34963001318610
IRF1404PBF N-Channel Power MOSFET Transistor 40V 162A TO-220

The IRF1404PbF represents International Rectifier’s seventh generation of HEXFET® Power MOSFET technology. It is engineered using advanced process techniques that achieve an exceptionally low on-resistance for its silicon area. This design philosophy focuses on maximizing efficiency and power density, building upon the rugged and fast-switching heritage that the HEXFET family is known for.

This transistor is constructed for high reliability under demanding conditions. It is fully characterized for avalanche energy, meaning it can withstand voltage spikes inherent in inductive load switching. The device is qualified for the rigorous automotive (AEC-Q101) standard and is rated to operate at a high junction temperature of up to 175°C, ensuring stable performance in environments with significant thermal stress.

Housed in the industry-standard TO-220AB package, this MOSFET offers a practical balance of cost-effectiveness and thermal performance. The package facilitates easy mounting to a heatsink, which is essential for managing the heat generated at high current levels. Its widespread adoption across commercial, industrial, and automotive fields makes it a versatile and accessible component for power circuit design.

Features:
  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Automotive Qualified (AEC-Q101).
  • Lead-Free.
Specifications:
Parameter Value Unit
Drain-to-Source Voltage (VDSS): 40 V
Continuous Drain Current (ID) @TC=25°C: 202 A
On-Resistance (RDS(on)) @ VGS=10V: 0.0035 (typ) Ω
Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V
Total Gate Charge (Qg) (typ): 131 nC
Max Junction Temperature (TJ): 175 °C
Package: TO-220AB
Pinout Diagram:

Applications:
  • Automotive Systems.
  • DC-DC Converters.
  • Motor Control.
  • Power Management.
Package Contents:
  • 1x IRF1404PBF N-Channel Power MOSFET Transistor 40V 162A TO-220
Datasheet

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