IRF1405 High Power N-Channel MOSFET 169A 55V TO-220 offers high efficiency, low RDS(on), and fast switching for power control and motor applications.
IRF1405 High Power MOSFET Transistor N-Channel 169A 55V TO-220
The IRF1405 High Power MOSFET Transistor is an N-Channel device designed for high-current and low-voltage switching applications. It offers an impressive drain current of 169A and a drain-to-source voltage rating of 55V, making it ideal for demanding power management systems. Housed in a TO-220 package, this MOSFET ensures efficient heat dissipation and easy mounting on heat sinks. With low on-resistance and fast switching characteristics, the IRF1405 is widely used in DC-DC converters, motor controllers, power supplies, and automotive applications, providing reliable performance and excellent energy efficiency.
Features
- High continuous drain current up to 169A for heavy-duty applications.
- Low RDS(on) for reduced power loss and high efficiency.
- Drain-to-source voltage (Vds) rating of 55V.
- Fast switching speed suitable for high-frequency circuits.
- TO-220 package for easy installation and effective heat dissipation.
- Enhanced ruggedness and reliability for industrial and automotive use.
- Compatible with low-voltage drive circuits.
- Ideal for motor drivers, power converters, and DC switching applications.
Pinout Configuration
| Pin No. | Pin Name | Pin Description |
| 1 | Gate (G) | Controls the biasing of the MOSFET |
| 2 | Drain (D) | Current flows in through the Drain |
| 3 | Source (S) | Current flows out through Source at leaves MOSFET |
Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Transistor Type | N-Channel | – | Enhancement mode MOSFET |
| Drain-to-Source Voltage (Vds) | 55 | V | Maximum voltage across drain and source |
| Continuous Drain Current (Id) | 169 | A | Maximum continuous current capability |
| Pulsed Drain Current (Id, pulse) | 680 | A | Peak pulsed current |
| Gate-to-Source Voltage (Vgs) | ±20 | V | Maximum allowable gate voltage |
| Drain-Source On-Resistance (RDS(on)) | 0.0053 | Ω | Typical resistance when ON |
| Total Gate Charge (Qg) | 260 | nC | Gate charge for switching |
| Power Dissipation (Pd) | 300 | W | Maximum power dissipation |
| Operating Junction Temperature (Tj) | -55 to +175 | °C | Safe operating temperature range |
| Package Type | TO-220 | – | Through-hole package with heat sink tab |
Simulation For IRF1405 Working
Let’s make a switching circuit with the help of IRF1405. This device is an N-channel MOSFET and it is a voltage control device. It means, if the gate-to-source voltage is sufficiently available, the device will turn ON. And if a gate-to-source voltage is not available, the device will remain turn OFF condition. To simulate this, we will make a simple example circuit for IRD1405 in Proteus as shown below
Condition-1 Gate-to-Source voltage VDS = 5V
In this condition, when we turn ON the switch, the current will pass through the load and LED. Once MOSFET is turned ON, it will remain ON until the gate voltage is 0 V.
Condition-2 Gate-to-Source voltage VDS = 5V
In this condition, gate-to-source is zero. Hence, the MOSFET remains in OFF condition and the current will not pass through load and LED.
Applications
- DC-DC converters and switch-mode power supplies (SMPS).
- Motor control circuits and PWM speed controllers.
- Automotive power systems such as electric steering and power inverters.
- Battery management systems and solar charge controllers.
- High-current switching and load regulation applications.
- Inverters and uninterruptible power supplies (UPS).
- Robotics and industrial automation equipment.
Datasheet
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