IRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220
IRF1407PBF 75V N-channel HEXFET in TO-220AB, 130A continuous, ultra-low RDS(on) 7.8 mΩ, high pulse current and 175°C TJ for automotive power systems.
40.00 EGP
Buy NowIRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220
The IRF1407PBF is a high-current N-channel HEXFET® power MOSFET offered in the through-hole TO-220AB package, engineered for aggressive power switching where very low on-resistance and high avalanche robustness are required. Built with an advanced stripe-planar process, it delivers extremely low RDS(on) per silicon area so designers can minimize conduction losses in high-current paths. The device’s TO-220 form factor makes it easy to mount on heatsinks or PCBs for effective thermal management.
Electrically the IRF1407PBF is specified for automotive and industrial use: a 75 V drain-to-source rating with a continuous drain current capability up to 130 A (TC = 25 °C) and pulse capability much higher, while supporting a maximum junction temperature up to 175 °C. Fast switching, low charge and improved repetitive avalanche ratings make it suitable where both dynamic and steady-state efficiency matter. Thermal and mechanical details (lead assignments, mounting dimensions, tab geometry) are documented for reliable assembly.
In practice the IRF1407PBF is chosen for high-power DC-DC stages, motor drive and automotive power distribution where low losses, rugged avalanche tolerance and good thermal coupling are essential. The combination of ultra-low RDS(on), high current rating and TO-220 usability provides a balance between performance and simple mechanical mounting for prototypes and production boards.
Features:
- 75 V drain-to-source breakdown voltage rating.
- Ultra low static on-resistance RDS(on) = 0.0078 Ω (max).
- High continuous drain current capability – 130 A (TC = 25 °C).
- High pulse drain current capability (IDM up to 520 A).
- 175 °C maximum junction operating temperature.
- Fast switching characteristics and moderate total gate charge.
- Improved repetitive avalanche rating and robust EAS single-pulse energy.
- TO-220AB (HEXFET) package for straightforward heatsinking and mounting.
Specifications:
| Parameter: | Value: |
|---|---|
| Device: | IRF1407PBF. |
| VDS (Drain-Source Voltage): | 75 V. |
| RDS(on) (Static On-Resistance): | 0.0078 Ω (max) @ VGS = 10 V, ID = 78 A. |
| ID (Continuous Drain Current): | 130 A @ TC = 25 °C; 92 A @ TC = 100 °C. |
| IDM (Pulsed Drain Current): | 520 A (pulse). |
| PD (Power Dissipation): | 330 W @ TC = 25 °C. |
| Linear derating factor: | 2.2 W/°C. |
| VGS (Gate-Source Voltage): | ±20 V (max). |
| VGS(th) (Gate Threshold): | 2.0 V (min) – 4.0 V (max) (ID = 250 µA). |
| gfs (Forward Transconductance): | Typical 74 S (VDS = 25 V, ID = 78 A). |
| EAS (Single Pulse Avalanche Energy): | 390 mJ. |
| Thermal resistance RθJC / RθJA: | RθJC 0.45 °C/W; RθCS 0.50 °C/W; RθJA ≈ 62 °C/W. |
| TJ (Operating Junction Temp): | -55 °C to +175 °C. |
| Storage Temperature (TSTG): | -55 °C to +175 °C. |
| Qg / Qgs / Qgd (Gate Charge): | Qg 160 nC – Qg max 250 nC; Qgs typ 35 nC; Qgd typ 54 nC. |
| Ciss / Coss / Crss (Capacitances): | Ciss 5600 pF; Coss variants shown (see datasheet figures). |
| Diode forward voltage (VSD): | Up to ~1.3 V @ IS = 78 A. |
| Reverse recovery (trr / Qrr): | trr 110 ns; Qrr 390 nC (conditions listed in datasheet). |
| Package / Lead assignments: | TO-220AB (HEXFET). Leads: 1-Gate, 2-Drain, 3-Source, 4-Drain (tab). |
Pinout Diagram:
Applications:
- Integrated starter-alternator systems.
- 42 V automotive electrical systems.
- High-current DC-DC converters and power distribution.
- Motor drivers and automotive power stages.
- Battery protection and load switching.
- General purpose high-current power switching.
Package Contents:
- 1x IRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220
Datasheet
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