IRF350 N-Channel MOSFET Transistor 400V 14A TO-3

IRF350 is A high-power 400V MOSFET commonly used in switching power supplies, motor drives, and inverters.

35.00 EGP

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IRF350 N-Channel MOSFET Transistor 400V 14A TO-3

The IRF350 is a high-voltage N-Channel HEXFET® power MOSFET from International Rectifier, designed in a robust TO-3 metal package. Utilizing advanced HEXFET technology, it delivers efficient power switching with very low on-state resistance and high transconductance. It is hermetically sealed for reliability and features excellent avalanche energy and dv/dt ruggedness. This transistor is voltage-controlled, offers fast switching speeds, stable temperature performance, and is easy to parallel, making it a durable choice for demanding high-power electronic circuits.

Features:
  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • Ease of Paralleling.
  • Fast Switching.
  • Temperature Stable.
Specifications:
Parameter Value Unit Condition
Drain-Source Voltage (VDSS): 400 V
Continuous Drain Current (ID): 14

9

A TC=25°C

TC=100°C

On-State Resistance (RDS(on)): 0.300 Ω VGS=10V, ID=9A
Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V
Total Gate Charge (Qg): 52 – 110 nC
Max Power Dissipation (PD): 150 W TC=25°C
Junction-to-Case Thermal RθJC: 0.83 °C/W

Pinout:

Pin Number Pin Name Description
1 Source (S) Source Terminal
2 Gate (G) Gate Terminal
3 Drain (D) Drain Terminal (Connected to Case)
Applications:
  • Switching Power Supplies (SMPS).
  • Motor Controllers and Drives.
  • DC-AC Inverters.
  • Choppers and Converters.
  • Audio Amplifiers.
  • High-Energy Pulse Circuits.
Packages:
  • 1x IRF350 N-Channel MOSFET Transistor 400V 14A TO-3.
Documents:

Datasheet

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