IRF350 N-Channel Power MOSFET Transistor 400V 14A TO-3
High-voltage N-channel IRF350 MOSFET in a rugged TO-3 metal can, rated 400 V VDS, 14 A continuous, 0.30 Ω RDS(on), 150 W dissipation.
60.00 EGP
Buy NowIRF350 N-Channel Power MOSFET Transistor 400V 14A TO-3
The IRF350 N-Channel Power MOSFET Transistor 400V 14A TO-3 is a HEXFET® power switching device designed for high-voltage, high-current applications. Featuring a 400 V drain-source rating and 14 A continuous drain current (at TC=25 °C), it offers low on-resistance of 0.30 Ω at VGS=10 V and fast switching (dv/dt ≥ 4 V/ns). The hermetic TO-3 metal package provides superb thermal performance (150 W dissipation) and mechanical robustness, making the IRF350 ideal for power supplies, motor drives, DC/DC converters, and industrial switching circuits.
Features
- 400 V drain-source voltage rating (VDSS).
- 14 A continuous drain current at TC=25 °C.
- Low on-resistance RDS(on)=0.30 Ω at VGS=10 V.
- Repetitive avalanche capability for inductive load switching.
- Fast switching: dv/dt ≥ 4 V/ns.
- 150 W power dissipation in TO-3 metal can package.
- ±20 V gate-source voltage tolerance.
- TTL-compatible gate threshold and easy paralleling.
Specifications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| ID @ VGS=10 V, TC=25 °C | Continuous Drain Current | 14 | A |
| ID @ VGS=10 V, TC=100 °C | Continuous Drain Current | 9.0 | |
| IDM @ TC=25 °C | Pulsed Drain Current | 56 | |
| PD @ TC=25 °C | Maximum Power Dissipation | 150 | W |
| — | Linear Derating Factor | 1.2 | W/°C |
| VGS | Gate–Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 700 | mJ |
| IAR | Avalanche Current | 14 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery | 4.0 | V/ns |
| TJ, Tstg | Operating Junction & Storage Temperature Range | –55 to +150 | °C |
| — | Lead Temperature | 300 (0.063 in / 1.6 mm from case for 10 s) | |
| — | Weight | ~11.5 | g |
Dimensions
Applications
- High-side and low-side power switches.
- DC/DC and AC/DC converter stages.
- Motor control and variable-speed drives.
- Industrial power supplies and inverters.
- High-voltage LED drivers and lighting controls.
Package Contents
- 1x IRF350 N-Channel Power MOSFET Transistor in TO-3 metal can.
Documents
| Weight | 12 g |
|---|---|
| Dimensions | 39 × 26 × 20 mm |
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