IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220
The IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220 is a high-performance device designed for efficient power switching and control. With a low on-resistance of just 23mΩ, it minimizes power loss and heat generation, making it ideal for high-current and high-speed applications. Its robust TO-220 package ensures excellent thermal performance and reliability, suitable for use in DC motor drivers, power converters, and switching power supplies.
Features
- N-Channel enhancement mode power MOSFET.
- High drain current up to 57A continuous.
- Low on-resistance of 23mΩ for efficient switching.
- High drain-source voltage rating of 100V.
- Fast switching speed with low gate charge.
- Rugged and reliable TO-220 package for superior heat dissipation.
- High efficiency with minimal conduction losses.
- Suitable for logic-level and high-speed switching applications.
Pinout Configuration
| Pin No. | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET’s switching by applying a voltage signal. |
| 2 | Drain (D) | Connected to the load; current flows from drain to source when the MOSFET is ON. |
| 3 | Source (S) | Connected to ground or the negative terminal of the circuit. |
| – | Tab (Drain) | The metal tab is internally connected to the drain for heat dissipation. |
Specifications
| Parameter | Symbol | Value | Unit | Description |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | Maximum voltage that can be applied from drain to source |
| Continuous Drain Current | ID | 57 | A | Maximum continuous current through the drain |
| Pulsed Drain Current | ID(pulse) | 200 | A | Maximum pulsed drain current |
| Gate-Source Voltage | VGS | ±20 | V | Maximum voltage between gate and source |
| Drain-Source On-Resistance | RDS(on) | 0.024 | Ω | Resistance between drain and source when ON |
| Gate Threshold Voltage | VGS(th) | 2.0 – 4.0 | V | Minimum gate voltage required to turn ON the MOSFET |
| Total Gate Charge | Qg | 67 | nC | Charge required to switch the gate |
| Power Dissipation | PD | 160 | W | Maximum power the device can dissipate |
| Operating Junction Temperature | TJ | -55 to +175 | °C | Safe operating temperature range |
| Package Type | — | TO-220AB | — | Standard power transistor package |
| Mounting Type | — | Through Hole | — | Suitable for PCB or heatsink mounting |
Applications
- DC-DC converters and power supply circuits.
- Motor control and driver circuits.
- Inverter and UPS systems.
- Switching regulators and load switches.
- Audio amplifier output stages.
- Battery management and protection circuits.
- High-speed switching and PWM control applications.
- Automotive and industrial power control systems.
Package Contents
- 1 x IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220
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