IRF510 N-Channel MOSFET Transistor 100V 5.6A TO-220AB

IRF510 N-Channel MOSFET Transistor 100V 5.6A TO-220AB

The IRF510 is a versatile N-Channel Power MOSFET from International Rectifier’s HEXFET® family, designed for reliable performance in various commercial and industrial applications. As a third-generation HEXFET device, it offers an excellent balance of fast switching capability, low on-resistance, and cost-effectiveness. With a TO-220 package that provides good thermal characteristics for power dissipation up to 50 watts, this MOSFET is suitable for applications requiring efficient switching or amplification. The device features a built-in body diode that allows for reverse current flow and is rated for repetitive avalanche conditions, making it robust in demanding environments. Its simple drive requirements and ease of paralleling make it popular among hobbyists and professionals alike for motor control, power supplies, and switching circuits.

Features:

• Fast switching capability.
• Dynamic dv/dt rating for reliability.
• Repetitive avalanche rated.
• High operating temperature (175°C).
• Built-in body diode.
• Simple drive requirements.
• Easy to parallel multiple devices.
• TO-220 package for good thermal management.

Specifications:

Applications:

• DC motor speed controllers.
• Power supply switching circuits.
• Audio amplifiers (class D).
• Relay and solenoid drivers.
• LED dimming and drivers.
• DC-DC converters.
• H-bridge motor drivers.

Packages:

• 1x IRF510 N-Channel MOSFET Transistor 100V 5.6A TO-220AB.

Documents:

IRF510 Datasheet