IRF520 N-Channel Power MOSFET TO-220 100V-9.2A-0.27Ω
The IRF520 is a 100V, 9.2A N-Channel HEXFET Power MOSFET in a TO-220 package with a low 0.27Ω on-resistance.
20.00 EGP
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The IRF520 is a third-generation N-channel HEXFET power MOSFET from International Rectifier, representing an advanced design that effectively balances fast switching performance, ruggedness, and low on-resistance. It is engineered using a vertical DMOS structure, which is the foundation of the HEXFET technology, enabling high efficiency and robust power handling. This transistor functions as a voltage-controlled device, where a voltage applied to the gate terminal relative to the source allows current to flow between the drain and source, making it an ideal solid-state switch for power electronics.
This MOSFET is characterized by its ability to switch currents rapidly, which is essential for high-frequency applications like switch-mode power supplies and motor controllers. The device is ruggedized, being rated for repetitive avalanche, meaning it can withstand short periods of over-voltage stress that drive it into the breakdown region without being damaged. This built-in durability, combined with a high operating junction temperature of 175°C, makes it a reliable component in demanding environments.
Housed in the industry-standard TO-220 package, the IRF520 is designed for easy mounting onto heat sinks, which is crucial for dissipating the heat generated during operation. The package offers a low thermal resistance from the silicon junction to the case, allowing the transistor to handle significant power levels. Its simple drive requirements and ease of paralleling make it a versatile and cost-effective choice for a wide range of commercial and industrial power applications.
Features:
- Dynamic dv/dt Rating.
- Repetitive Avalanche Rated.
- 175°C Operating Temperature.
- Fast Switching.
- Ease of Paralleling.
- Simple Drive Requirements.
- Third Generation HEXFET Technology.
- Low Thermal Resistance.
- Cost-Effective.
Specifications:
| Specification | Value |
|---|---|
| Drain-Source Voltage (VDSS): | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C: | 9.2 A |
| Max. On-Resistance (RDS(on)) @ VGS=10V: | 0.27 Ω |
| Gate Threshold Voltage (VGS(th)): | 2.0 – 4.0 V |
| Max. Power Dissipation (PD) @ Tc=25°C: | 60 W |
| Gate-Source Voltage (VGS): | ±20 V |
| Total Gate Charge (Qg): | 16 nC (typ.) |
| Operating Junction Temperature (TJ): | -55 to +175 °C |
| Package: | TO-220 |
Pin Configuration:
| Pin Number | Pin Name | Description |
| 1 | Source | Current flows out through Source |
| 2 | Gate | Controls the biasing of the MOSFET |
| 3 | Drain | Current flows in through Drain |
Applications:
- Switching high power devices
- Control speed of motors
- LED dimmers or flashers
- High Speed switching applications
- Converters or Inverter circuits
Package Contents:
- 1x IRF520 N-Channel Power MOSFET TO-220 100V-9.2A-0.27Ω
Datasheet
| Weight | 10 g |
|---|---|
| Dimensions | 10 × 10 × 30 mm |