IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220
High-power P-channel MOSFET with 100V, 40A rating and 60mΩ Rds(on) for efficient switching in a TO-220 package.
35.00 EGP
Buy NowIRF 5210 P-Channel MOSFET – 100V, 40A, 60mΩ, TO-220
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications .The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification
- High performance in low frequency applications
- Standard pin-out allows for drop-in replacement
- High current capability
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 100 V |
| Id – Continuous Drain Current: | 40 A |
| Rds On – Drain-Source Resistance: | 60 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 120 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 200 W |
| Configuration: | Single |
Data Sheet – IRF5210
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