IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220

IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220

The IRF5210 is a P-Channel Power MOSFET born from International Rectifier’s fifth-generation HEXFET technology. This advanced manufacturing process is the core of its performance, enabling the integration of a powerful transistor into a compact silicon area. The focus of this technology is to fundamentally reduce electrical resistance when the device is switched on, which is a primary source of power loss and heat generation in such components.

Housed in the ubiquitous TO-220 package, the device is built for robustness and practical utility. This package is industry-standard for good reason: it offers an effective compromise between cost, physical size, and thermal performance. The design facilitates efficient transfer of heat from the silicon junction to a heatsink, which is crucial for maintaining reliability under continuous high-power operation. The transistor is also described as “fully avalanche rated,” indicating a rugged design that can withstand brief periods of high-voltage stress beyond its normal breakdown rating without failure.

In application, this combination of technology and design translates into a component known for efficient power control. Its fast switching capability allows it to transition rapidly between on and off states, minimizing transition losses a key factor in modern, efficient power circuits. The overall result is a power switch that provides designers with a dependable and effective means of controlling significant current levels, contributing to the stability and efficiency of the broader electronic system it serves.