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IRF5305 P-Channel Power MOSFET 55V 31A 60mΩ@10V,16A TO-220

20.00 EGP

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Availability: In Stock
SKU:300000007096
-55V Single P-Channel Power MOSFET in a TO-220 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Summary of Features
  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating
Benefits
  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability
Specifications
Product AttributeAttribute Value
Product Category:MOSFET
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-220-3
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:55 V
Id – Continuous Drain Current:31 A
Rds On – Drain-Source Resistance:60 mOhms
Vgs – Gate-Source Voltage:– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:4 V
Qg – Gate Charge:42 nC
Minimum Operating Temperature:– 55 C
Maximum Operating Temperature:+ 175 C
Pd – Power Dissipation:110 W
Configuration:Single
Fall Time:63 ns
Forward Transconductance – Min:8 S
Rise Time:66 ns
Datasheet
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