IRF5305 P-Channel Power MOSFET 55V 31A TO-220
Compact IRF5305 P‑Channel Power MOSFET in TO‑220 package, 55 V VDS, –31 A continuous current, optimized for efficient high‑side switching.
20.00 EGP
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The IRF5305 is a robust P‑channel HEXFET® MOSFET in a TO‑220AB package, designed for high‑power applications requiring efficient high‑side switching. It delivers a continuous drain current of –31 A (–22 A at 100 °C) and withstands up to 55 V drain‑to‑source voltage. With a low on‑resistance of 0.06 Ω at VGS=–10 V and an impressive 110 W power dissipation rating, the IRF5305 ensures minimal conduction losses and reliable operation up to a 175 °C junction temperature.
Features
- Fifth‑generation HEXFET® technology for extremely low RDS(on).
- P‑channel configuration ideal for high‑side power switching.
- 55 V drain‑to‑source breakdown voltage.
- Continuous drain current: –31 A @25 °C (–22 A @100 °C).
- Low RDS(on): 0.06 Ω @ VGS=–10 V, ID=–16 A.
- High pulse‑current capability: –110 A pulsed.
- Wide gate‑to‑source rating: ±20 V.
- Single‑pulse avalanche energy: 280 mJ.
- Fast switching with typical turn‑on delay of 14 ns and turn‑off delay of 39 ns.
Specifications
Maximum Ratings at TC = 25 °C
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain–Source Voltage | VDSS | 55 | V |
| Continuous Drain Current | ID | –31 | A |
| Pulsed Drain Current | IDM | –110 | A |
| Gate–Source Voltage | VGS | ±20 | V |
| Power Dissipation | PD | 110 | W |
| Operating Junction Temperature | TJ | –55 to +175 | °C |
| Storage Temperature | Tstg | –55 to +175 | °C |
Applications
- High‑side load switching in automotive and industrial systems.
- DC‑DC converters and reverse‑battery protection.
- Power management in telecommunications and server supplies.
- Motor control, battery protection, and hot‑swap circuits.
Package Contents
- 1× IRF5305 P‑Channel Power MOSFET in TO‑220AB package.