IRF540 N-channel power MOSFET (TO-220) with 100V, 33A, and 0.044Ω Rds(on), ideal for efficient power switching in high-performance circuits.
15.00 EGP
Buy NowThe IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A) is an advanced enhancement-mode silicon-gate power field-effect transistor designed for high-efficiency power switching and amplification applications. this device combines low on-state resistance with fast switching speeds to minimize power losses and heat generation in demanding circuits.
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain-Source Resistance (Rds On) | 44mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 71 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 130W |
