IRF540 N-channel power MOSFET (TO-220) with 100V, 33A, and 0.044Ω Rds(on), ideal for efficient power switching in high-performance circuits.
IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Detailed Specifications
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain-Source Resistance (Rds On) | 44mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 71 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 130W |
