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IRF540 N-Channel 100V – 0.044Ω – 33A

13.00 EGP

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Availability: In Stock
SKU:2045189950805

IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
Detailed Specifications
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 130W
Related Documents
IRF540 MOSFET Datasheet 
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