IRF540NPBF N-Channel Power MOSFET 100V-0.044Ω-33A TO-220
A robust 100V, 33A N-Channel HEXFET MOSFET in a TO-220 package. Features very low 44mΩ on-resistance, fast switching, and is avalanche rated.
17.00 EGP
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The IRF540NPBF is a member of International Rectifier’s advanced HEXFET® family of N-channel power MOSFETs. Its design leverages sophisticated stripe planar processing techniques engineered to maximize silicon efficiency, achieving an exceptionally low channel resistance. This fundamental architectural advantage is the key to its performance, minimizing the inherent losses during conduction. The device is housed in the ubiquitous TO-220AB package, a industry-standard choice that offers an excellent balance of cost-effectiveness and thermal performance for commercial and industrial power levels.
This MOSFET is built not just for efficiency but also for durability in demanding electrical environments. It is characterized by a very fast switching speed, which is crucial for modern high-frequency power conversion circuits, reducing switching losses. Furthermore, the device is fully rated for repetitive avalanche energy, meaning it can safely withstand voltage spikes and inductive load transients that would destroy less robust components. This ruggedness, combined with a high maximum operating junction temperature of 175°C, ensures reliable operation under stressful conditions.
The combination of ultra-low on-resistance, fast switching, and rugged avalanche capability makes the IRF540NPBF a highly efficient and reliable building block for power electronics. It serves as a versatile and trusted workhorse component, allowing designers to create simpler, more efficient, and more robust circuits. Its design prioritizes both performance in operation and resilience against real-world electrical stresses, solidifying its role as a fundamental solution for managing significant power levels.
Features:
- Advanced Process Technology.
- Ultra Low On-Resistance.
- Dynamic dv/dt Rating.
- 175°C Operating Temperature.
- Fast Switching.
- Fully Avalanche Rated.
- Lead-Free (PBF) Construction.
Specifications:
| Parameter | Symbol | Value | Conditions / Notes |
|---|---|---|---|
| Drain-Source Voltage: | VDSS | 100 V | |
| Continuous Drain Current: | ID | 33 A | @ TC = 25°C |
| Continuous Drain Current: | ID | 23 A | @ TC = 100°C |
| Pulsed Drain Current: | IDM | 110 A | |
| Static Drain-Source On-Resistance: | RDS(on) | 44 mΩ (max) | VGS = 10V, ID = 16A |
| Gate Threshold Voltage: | VGS(th) | 2.0 – 4.0 V | |
| Total Gate Charge: | Qg | 71 nC (typ) | VDS=80V, ID=16A |
| Input Capacitance: | Ciss | 1960 pF (typ) | |
| Power Dissipation: | PD | 130 W | @ TC = 25°C |
| Max. Junction Temperature: | TJ | 175 °C | |
| Thermal Resistance, Junction-to-Case: | RθJC | 1.15 °C/W (max) |
Pinout Diagram:
Applications:
- Switch Mode Power Supplies (SMPS).
- Motor Controllers and Drives.
- DC-DC Converters.
- Inverters.
- Power Management Systems.
Package Contents:
- 1x IRF540NPBF N-Channel Power MOSFET 100V-0.044Ω-33A TO-220
Datasheet
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