IRF620 N-Channel Power MOSFET Transistor 200V 6A 0.8Ω TO-220
The IRF620 is an N-channel Power MOSFET (200V, 6A) featuring low on-resistance (). It is 100% avalanche tested and ideal for switching applications.
20.00 EGP
Buy NowIRF620 N-Channel Power MOSFET Transistor 200V 6A 0.8Ω TO-220
The IRF620 is an N-channel Power MOSFET. Its refined layout significantly improves the RDS(on)(on-resistance) figure of merit while maintaining high performance in switching speed, gate charge, and overall ruggedness.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
Specifications
| Parameter | IRF620 | Unit | |
|---|---|---|---|
| VDSS (Drain-Source Voltage) | 200 | V | |
| ID (Continuous Drain Current) | 6 | A | |
| RDS(on) (Max) | 0.8 | Ω |
Thermal Data
| Parameter | Value (TO-220) | Value (TO-220FP) | Unit |
|---|---|---|---|
| Thermal Resistance Junction-Case (Max) | 1.79 | 4.17 | °C/W |
| Thermal Resistance Junction-Ambient (Max) | 62.5 | – | °C/W |
| Max Lead Temperature for Soldering | 300 | °C | |
Electrical Characteristics (TCASE = 25°C unless noted)
| Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|
| Gate Threshold Voltage (VGS(th)) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 μA |
| Static Drain-Source On-Resistance (RDS(on)) | – | 0.6 | 1.8 | Ω | VGS = 10V, ID = 3A |
| Input Capacitance (Ciss) | – | 350 | – | pF | VDS = 25V, f = 1 MHz, VGS = 0 |
| Output Capacitance (Coss) | – | 70 | – | pF | |
| Reverse Transfer Capacitance (Crss) | – | 35 | – | pF | |
| Total Gate Charge (Qg) | – | 19 | – | nC | VDD = 160V, ID = 6A, VGS = 10V |
Applications
- Switching applications
DataSheet
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