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IRF620 N-Channel Power MOSFET Transistor 200V 6A 0.8Ω TO-220

20.00 EGP

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Availability: In Stock
SKU:5118632198387
Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
Pinout:

IRF620 Pin Configuration
Pin NoPin Name
1Gate
2Drain
3Source
Detailed Specifications:-
TypeDescription
CategoryTransistors

FETs, MOSFETs

Single FETs, MOSFETs

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current – Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
Power Dissipation (Max)70W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
IRF620 Datasheet

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