IRF730 N-Channel MOSFET Transistor 400V 5.5A TO-220
The IRF730 N‑Channel Power MOSFET 400 V 5.5 A TO‑220AB is a third‑generation enhancement‑mode device offering an optimal balance of low on‑resistance, fast switching, and rugged avalanche capability. Packaged in the industry‑standard TO‑220AB, it supports up to 74 W dissipation at 25 °C case temperature and is suitable for high‑voltage commercial and industrial power applications.
Features
- Dynamic dV/dt rating.
- Repetitive avalanche rated.
- Fast switching.
- Ease of paralleling.
- Simple drive requirements.
Specifications
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain–Source Voltage | VDS | 400 | V |
| Gate–Source Voltage | VGS | ± 20 | V |
| Continuous Drain Current (VGS = 10 V) |
ID | 5.5 (at TC=25 °C) 3.5 (at TC=100 °C) |
A |
| Pulsed Drain Currenta | IDM | 22 | A |
| Linear Derating Factor | — | 0.59 | W/°C |
| Single‑Pulse Avalanche Energyb | EAS | 290 | mJ |
| Repetitive Avalanche Currenta | IAR | 5.5 | A |
| Repetitive Avalanche Energya | EAR | 7.4 | mJ |
| Maximum Power Dissipation (TC = 25 °C) |
PD | 74 | W |
| Peak Diode Recovery dV/dtc | dV/dt | 4.0 | V/ns |
| Operating Junction & Storage Temperature Range | TJ, Tstg | –55 to +150 | °C |
| Soldering Recommendations (peak temperature, for 10 s) |
— | 300 | °C |
| Mounting Torque (6–32 or M3 screw) |
— | 1.1 | N·m |
Notes:
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
Dimensions
Applications
- Switching regulators and high‑voltage DC/DC converters.
- Motor control drivers and relay/solenoid switching.
- Uninterruptible power supplies (UPS) and power inverters.
- Inductive load switching in industrial power systems.
- Avalanche‑energy absorption in snubberless designs.
Package Contents
- 1x IRF730 N‑Channel Power MOSFET 400 V 5.5 A TO‑220.
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