IRF9540N P-Channel Power MOSFET Transistor 100V 23A 0.117Ω TO-220 (Orignal)
P-channel HEXFET IRF9540N (TO-220AB): −100 V, low RDS(on) (0.117 Ω), high current handling, avalanche rated, fast switching for industrial power stages.
20.00 EGP
Buy NowIRF9540N P-Channel Power MOSFET Transistor 100V 23A 0.117Ω TO-220 (Orignal)
The IRF9540N is a fifth-generation P-channel HEXFET power MOSFET in a TO-220AB package designed for efficient high-power, high-voltage switching. Built with advanced processing to minimize on-resistance per silicon area, it delivers strong conduction capability and fast switching for commercial and industrial power designs. The device is fully avalanche rated and intended for designers who need robust, reliable P-channel performance in a compact package.
With a −100 V drain-to-source rating and low RDS(on) when driven to −10 V, the IRF9540N handles high continuous and pulsed currents while maintaining thermal stability up to elevated junction temperatures. The datasheet shows detailed switching and charge characteristics (gate charge, Miller charge, capacitances) that make the device predictable in gate-drive and transient conditions. Thermal resistance and derating data support use in heatsinked TO-220 applications.
The TO-220AB outline and low thermal resistance make the IRF9540N suitable for ≈50 W class power dissipation with proper mounting. It features fast switching, robust avalanche energy ratings, and controlled diode recovery, providing the mechanical and electrical ruggedness required for high-reliability power stages, high-side switching, and industrial controllers.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
Specifications
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -23 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -16 | |
| IDM | Pulsed Drain Current | -76 | |
| PD @ TC = 25°C | Power Dissipation | 140 | W |
| — | Linear Derating Factor | 0.91 | W/°C |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 430 | mJ |
| IAR | Avalanche Current | -11 | A |
| EAR | Repetitive Avalanche Energy | 14 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +175 | °C |
| — | Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
| — | Mounting torque, 6-32 or M3 screw | 10 lbf·in (1.1 N·m) | — |
Applications
- Power-management high-side switching.
- Load and reverse-polarity protection.
- Linear and switching power supplies.
- Battery management and power distribution.
- Motor drive and control circuits.
- Audio power stages and amplifiers.
- Industrial controllers and relay replacement.
Documents
| Datasheet | IRF9540N |
| CAD Files | Altium |
| Weight | 3 g |
|---|---|
| Dimensions | 30 × 10 × 5 mm |
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