IRF9540N P-Channel Power MOSFET Transistor TO-220
The IRF9540N is a fifth-generation P-channel HEXFET power MOSFET in a TO-220AB package designed for efficient high-power, high-voltage switching. Built with advanced processing to minimize on-resistance per silicon area, it delivers strong conduction capability and fast switching for commercial and industrial power designs. The device is fully avalanche rated and intended for designers who need robust, reliable P-channel performance in a compact package.
With a −100 V drain-to-source rating and low RDS(on) when driven to −10 V, the IRF9540N handles high continuous and pulsed currents while maintaining thermal stability up to elevated junction temperatures. The datasheet shows detailed switching and charge characteristics (gate charge, Miller charge, capacitances) that make the device predictable in gate-drive and transient conditions. Thermal resistance and derating data support use in heatsinked TO-220 applications.
The TO-220AB outline and low thermal resistance make the IRF9540N suitable for ≈50 W class power dissipation with proper mounting. It features fast switching, robust avalanche energy ratings, and controlled diode recovery, providing the mechanical and electrical ruggedness required for high-reliability power stages, high-side switching, and industrial controllers.
Features:
- P-channel HEXFET power MOSFET with advanced process technology.
- Drain-to-source breakdown voltage of −100 V.
- Low RDS(on) = 0.117 Ω (max at VGS = −10 V).
- High continuous drain current capability (−23 A @ TC = 25°C).
- Fully avalanche rated with specified single-pulse and repetitive energies.
- Fast switching with characterized turn-on/turn-off and rise/fall times.
- Controlled body-diode recovery and specified reverse recovery charge.
- Wide operating junction temperature range up to +175°C.
- TO-220AB package for low thermal resistance and easy heatsinking.
Specifications:
| Parameter: | Value: |
|---|---|
| V(BR)DSS (Drain-Source Breakdown): | −100 V |
| RDS(on) (Static On-Resistance): | 0.117 Ω (Max, VGS = −10 V, ID = −11 A) |
| ID (Continuous Drain Current @ 25°C): | −23 A |
| ID (Continuous Drain Current @ 100°C): | −16 A |
| IDM (Pulsed Drain Current): | −76 A |
| PD (Power Dissipation @ 25°C): | 140 W |
| VGS (Gate-to-Source Voltage): | ±20 V |
| EAS (Single Pulse Avalanche Energy): | 430 mJ |
| IAR (Avalanche Current): | −11 A |
| EAR (Repetitive Avalanche Energy): | 14 mJ |
| TJ (Operating Junction Temperature): | −55 to +175°C |
| RθJC (Junction-to-Case): | 1.1 °C/W |
| RθJA (Junction-to-Ambient): | 62 °C/W |
| Qg (Total Gate Charge): | 97 nC (ID = −11 A, VDS = −80 V) |
| Qgs (Gate-to-Source Charge): | 15 nC |
| Qgd (Gate-to-Drain/Miller Charge): | 51 nC |
| Ciss / Coss / Crss (Capacitances): | 1300 pF / 400 pF / 240 pF |
Pinout Diagram:
Footprint Diagram:
Applications:
- Power-management high-side switching.
- Load and reverse-polarity protection.
- Linear and switching power supplies.
- Battery management and power distribution.
- Motor drive and control circuits.
- Audio power stages and amplifiers.
- Industrial controllers and relay replacement.
Package Contents:
- 1x IRF9540N P-Channel Power MOSFET Transistor TO-220
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