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IRF9620 P-Channel MOSFET 200V 3.5A 1.5Ω@1.5A,10V 40W TO-220AB

20.00 EGP

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Availability: In Stock
SKU:3496300082735
IRF9620PBF
The HEXFET technology is the key to the international Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contributes to its wide acceptance throughout the industry.
Features
  • Dynamic dv/dt rating
  • P-Channel
  • fast switching
  • Ease of Paralleling
  • Simple drive requirements
Detailed Specifications
Attribute Value
Drain Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 3.5A
Power Dissipation (Pd) 40W
Drain Source On Resistance (RDS(on)@Vgs,Id) 1.5Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
Type P Channel
Input Capacitance (Ciss@Vds) 350pF@25V
Total Gate Charge (Qg@Vgs) 22nC@10V
Operating Temperature -55℃~+150℃@(Tj)
Related Documents
IRF9620 Datasheet
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