IRFB3207 N-Channel MOSFET Transistor
The IRFB3207 N-Channel MOSFET transistor is designed for high efficiency and power switching applications. It features a low on-resistance (Rds(on)) of 3.6mΩ (typical) and a high drain-to-source breakdown voltage of 75V, making it ideal for demanding environments. The MOSFET offers fast switching times, high current capabilities up to 170A, and robust performance under various conditions, including high temperatures and power levels.
Features:
- Low on-resistance of 3.6mΩ (typical) for reduced conduction losses.
- High continuous drain current rating of 170A.
- Drain-to-source voltage of 75V.
- Fast switching speeds, with a turn-on delay time of 29ns and a rise time of 120ns.
Specifications:
| Parameter | Value |
|---|---|
| Vds (Drain-to-Source Voltage) | 75V |
| Rds(on) (On-Resistance) | 3.6mΩ (typ.) |
| Id (Continuous Drain Current) | 170A |
| Qg (Gate Charge) | 180nC |
| Vgs(th) (Gate Threshold Voltage) | 2.0V |
| Pd (Power Dissipation) | 300W |
| Tj (Operating Junction Temperature) | -55 to +175°C |
| RθJC (Junction-to-Case Thermal Resistance) | 0.50°C/W |
Pin Configuration:
Applications:
- High-efficiency synchronous rectification in switch-mode power supplies (SMPS).
- Uninterruptible power supply (UPS) systems.
- High-speed power switching circuits.
- Hard-switched and high-frequency power applications.
- Energy-efficient power conversion systems.
Package Include:
1x IRFB3207 N-Channel MOSFET Transistor
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