IRFB3607 N-Channel MOSFET Transistor 75V 80A
IRFB3607 N-Channel MOSFET Transistor provides 75V drain-source voltage, 80A continuous current, and low 9mΩ on-resistance for efficient high-speed switching
65.00 EGP
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The IRFB3607 N-Channel MOSFET Transistor 75V 80A is a high-performance power semiconductor device designed for superior efficiency in switching and rectification applications. As an N-channel enhancement-mode MOSFET, it controls current flow between drain and source via gate voltage, offering robust operation in high-frequency and hard-switched environments. With a drain-source voltage rating of 75V, it handles substantial power levels, supporting continuous drain currents up to 80A at 25°C case temperature and 56A at 100°C, making it suitable for systems requiring reliable performance under thermal stress.
Features:
- High drain-source voltage rating of 75V for robust voltage handling.
- Continuous drain current up to 80A for high-power applications.
- Low on-resistance of 9.0mΩ maximum for reduced conduction losses.
- Enhanced avalanche and dv/dt ruggedness for reliable operation.
Specifications:
| Parameter | Value |
|---|---|
| Brand | INTERNATIONAL RECTIFIER |
| Transistor Type | N-MOSFET |
| Maximum Voltage Drain-Source (Uds) | 75 V |
| Maximum Drain Current | 80 A |
| Operating Temperature | -55~175 °C |
| Drain-Source Resistance at 25°С | 9 mohm |
| Power (Pd) | 140 W |
| Housing | TO-220 |
| Maximum Voltage Gate-Source (Ugs) | ±20 V |
| Model | IRFB3607 |
| Mounting | THT |
Pin Configuration:
Package Include:
1x IRFB3607 N-Channel MOSFET Transistor 75V 80A
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