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IRFB4110 N-Channel MOSFET Transistor 100V 180A TO-220

65.00 EGP

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Availability: In Stock
SKU:3496300107148
Features:
  • The IRFB4110 is a silicon-based, N-channel MOSFET designed to handle high currents and voltages.
  • High Current Capability: Can handle continuous drain currents up to 180A.
  • High Voltage Rating: Drain-to-source voltage (VDS_{DS}DS​) of up to 100V.
  • The transistor is housed in a TO-220 package, this design focuses on achieving high power efficiency through low RDS(on)_{DS(on)}DS(on)​ and minimizing heat dissipation.
  • Fast Switching: Optimized for high-speed operation in demanding circuits.
  • High Power Density: Supports compact and efficient designs.
  • low on-resistance, high efficiency, and fast switching, making it suitable for various power management and electronic switching circuits.
  • This device is ideal for DC-DC converters, motor drives, power supplies, and battery management systems.
Pin Assignments:

 

Specifications:
Datasheet IRFB4110
Model IRFB4110
Product Type MOSFETs
Channel Mode Enhancement
Configuration Single
Transistor Type 1 N-Channel
Number of Channels 1 Channel
Mounting Style Through Hole
Package/Case TO – 220
Vds-Drain-Source Breakdown Voltage 100 V
Id-Continuous Drain Current 180 A
Rds On-Drain-Source Resistance 4.5 mΩ
Vgs-Gate-Source Voltage – 20 V, + 20 V
Operating Temperature – 55 °C  to + 175 °C
Pd-Power Dissipation 370 W
Fall Time 88 ns
Rise Time 67 ns
Typical Turn-Off Delay Time 78 ns
Typical Turn-On Delay Time 25 ns
Applications:
  • DC-DC converters.
  • Switched-mode power supplies (SMPS).
  • Motor control circuits.
  • Uninterruptible power supplies (UPS).
  • Renewable energy systems (e.g., solar inverters).
  • High-power battery management.
  • Hard switched and High frequency circuits.
Datasheet:

IRFB4110

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