Features:
- The IRFB4110 is a silicon-based, N-channel MOSFET designed to handle high currents and voltages.
- High Current Capability: Can handle continuous drain currents up to 180A.
- High Voltage Rating: Drain-to-source voltage (VDS_{DS}DS) of up to 100V.
- The transistor is housed in a TO-220 package, this design focuses on achieving high power efficiency through low RDS(on)_{DS(on)}DS(on) and minimizing heat dissipation.
- Fast Switching: Optimized for high-speed operation in demanding circuits.
- High Power Density: Supports compact and efficient designs.
- low on-resistance, high efficiency, and fast switching, making it suitable for various power management and electronic switching circuits.
- This device is ideal for DC-DC converters, motor drives, power supplies, and battery management systems.
Pin Assignments:
Specifications:
Datasheet | IRFB4110 |
Model | IRFB4110 |
Product Type | MOSFETs |
Channel Mode | Enhancement |
Configuration | Single |
Transistor Type | 1 N-Channel |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Package/Case | TO – 220 |
Vds-Drain-Source Breakdown Voltage | 100 V |
Id-Continuous Drain Current | 180 A |
Rds On-Drain-Source Resistance | 4.5 mΩ |
Vgs-Gate-Source Voltage | – 20 V, + 20 V |
Operating Temperature | – 55 °C to + 175 °C |
Pd-Power Dissipation | 370 W |
Fall Time | 88 ns |
Rise Time | 67 ns |
Typical Turn-Off Delay Time | 78 ns |
Typical Turn-On Delay Time | 25 ns |
Applications:
- DC-DC converters.
- Switched-mode power supplies (SMPS).
- Motor control circuits.
- Uninterruptible power supplies (UPS).
- Renewable energy systems (e.g., solar inverters).
- High-power battery management.
- Hard switched and High frequency circuits.
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