The IRFB4110 N-Channel MOSFET (100V, 180A, TO-220) offers high current handling, low on-resistance, fast switching for efficient power conversion switching.
IRFB4110 N-Channel MOSFET Transistor 100V 180A TO-220
The IRFB4110 is a high-performance N-channel MOSFET designed for demanding power switching applications. Housed in a TO-220 package, this MOSFET offers a drain-to-source voltage rating of 100V and can handle up to 180A of continuous drain current, making it ideal for high-current circuits such as motor drives, DC-DC converters, power supplies, and battery-powered systems. With a low value, the IRFB4110 ensures minimal conduction losses, improving overall efficiency in power-sensitive designs. It features fast switching speeds and rugged avalanche characteristics, enhancing performance in high-frequency applications. The TO-220 package provides excellent thermal conductivity, allowing for effective heat dissipation with the use of a heatsink. Overall, the IRFB4110 is a reliable and efficient choice for engineers looking for a powerful N-channel MOSFET capable of handling high current and voltage in a compact, easy-to-mount package.
Features:
- The IRFB4110 is a silicon-based, N-channel MOSFET designed to handle high currents and voltages.
- High Current Capability: Can handle continuous drain currents up to 180A.
- High Voltage Rating: Drain-to-source voltage (VDS_{DS}DS) of up to 100V.
- The transistor is housed in a TO-220 package, this design focuses on achieving high power efficiency through low RDS(on)_{DS(on)}DS(on) and minimizing heat dissipation.
- Fast Switching: Optimized for high-speed operation in demanding circuits.
- High Power Density: Supports compact and efficient designs.
- low on-resistance, high efficiency, and fast switching, making it suitable for various power management and electronic switching circuits.
- This device is ideal for DC-DC converters, motor drives, power supplies, and battery management systems.
Pin Configuration:
Specifications:
| Datasheet | IRFB4110 |
| Model | IRFB4110 |
| Product Type | MOSFETs |
| Channel Mode | Enhancement |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Package/Case | TO – 220 |
| Vds-Drain-Source Breakdown Voltage | 100 V |
| Id-Continuous Drain Current | 180 A |
| Rds On-Drain-Source Resistance | 4.5 mΩ |
| Vgs-Gate-Source Voltage | – 20 V, + 20 V |
| Operating Temperature | – 55 °C to + 175 °C |
| Pd-Power Dissipation | 370 W |
| Fall Time | 88 ns |
| Rise Time | 67 ns |
| Typical Turn-Off Delay Time | 78 ns |
| Typical Turn-On Delay Time | 25 ns |
Applications:
- DC-DC converters.
- Switched-mode power supplies (SMPS).
- Motor control circuits.
- Uninterruptible power supplies (UPS).
- Renewable energy systems (e.g., solar inverters).
- High-power battery management.
- Hard switched and High frequency circuits.
Datasheet:
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