IRFB4229 MOSFET A robust and efficient solution for high-power applications, the IRFB4229 N-Channel MOSFET is engineered for superior performance and reliability. This transistor is an excellent choice for power management in a variety of electronic circuits. Its advanced design ensures fast switching speeds and low on-resistance, making it a highly effective component for demanding tasks.
Features
Low On-Resistance High Voltage and Current Fast Switching High Temperature Operation Robust and Reliable Enhancement Mode
Specification
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
46
A
IDM
Drain Current-Single Pulsed
180
A
PD
Total Dissipation @Tc=25°C
330
W
Tj
Max. Operating Junction Temperature
175
°C
Tstg
Storage Temperature
-40~175
°C
Thermal Characteristics
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.45
°C/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62
°C/W
Electrical Characteristics (Tc=25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS =0V; ID =250 µA
250
V
VGS(th)
Gate Threshold Voltage
VDS =VGS ; ID =250 µA
3
5
V
RDS(on)
Drain-Source On-Resistance
VGS =10V; ID =26A
46
mΩ
IGSS
Gate-Source Leakage Current
VGS = ±20V
±0.1
µA
IDSS
Drain-Source Leakage Current
VDS =250V; VGS = 0V
20
µA
VSD
Diode forward voltage
IS =26A; VGS = 0V
1.3
V
Applications
Power supply units DC-DC converters Motor control systems Inverters and converters Switching regulators Power management systems
DataSheet
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