IRFP044 N Channel MOSFET 60V 57A 0.028Ω TO-247AC
The IRFP044 is a third-generation N-channel HEXFET power MOSFET engineered by International Rectifier. It represents a significant evolution in power transistor technology, designed to offer an optimal blend of performance and robustness. Its core utilizes a vertical DMOS structure, which is central to the HEXFET design, enabling the device to handle very high current levels with exceptional efficiency. This construction is focused on minimizing conduction losses while maintaining ruggedness for demanding industrial environments.
A defining characteristic of this MOSFET is its extremely low static drain-to-source on-resistance. This ultra-low resistance is crucial as it directly translates to reduced power dissipation when the device is in its fully on state, leading to higher overall system efficiency and less heat generation. The transistor is also characterized by its fast switching capabilities, which allow it to operate effectively in high-frequency circuits. Furthermore, it is designed with a dynamic dv/dt rating and is capable of withstanding specified levels of avalanche energy, enhancing its reliability in the presence of voltage transients.
Housed in the TO-247 package, the IRFP044 is built for applications that exceed the power handling capabilities of smaller packages like the TO-220. A key mechanical advantage of this package is its isolated central mounting hole, which simplifies the installation of a heat sink without the need for insulating hardware. The package also provides greater creepage distances between its pins, which helps in meeting various safety specification requirements in commercial and industrial equipment.
Features:
- Dynamic dv/dt Rating.
- Isolated Central Mounting Hole.
- 175°C Operating Temperature.
- Fast Switching.
- Ease of Paralleling.
- Simple Drive Requirements.
- Third Generation HEXFET Technology.
Specifications:
| Specification | Value |
|---|---|
| Drain-Source Voltage (VDSS): | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C: | 57 A |
| Max. On-Resistance (RDS(on)) @ VGS=10V: | 0.028 Ω |
| Gate Threshold Voltage (VGS(th)): | 2.0 – 4.0 V |
| Max. Power Dissipation (PD) @ Tc=25°C: | 180 W |
| Gate-Source Voltage (VGS): | ±20 V |
| Total Gate Charge (Qg): | 95 nC (max) |
| Operating Junction Temperature (TJ): | -55 to +175 °C |
| Package: | TO-247 |
Pinout Diagram:
Footprint Diagram:
Applications:
- High-Current DC Motor Controls.
- Switch-Mode Power Supplies (SMPS).
- Power Inverters and Converters.
- High-Power Amplifiers.
- Industrial Switching Equipment.
Package Contents:
- 1x IRFP044 N Channel MOSFET 60V 57A 0.028Ω TO-247AC
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