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IRFP044 N-Channel Power MOSFET Transistor 60V 57A TO-247AC
IRFP044 is a High-current N-channel MOSFET commonly used for switching and amplification in power electronics circuits.
45.00 EGP
Buy NowIRFP044N N-Channel Power MOSFET Transistor 60V 57A TO-247AC
The IRFP044 is a high-performance N-Channel Power MOSFET designed for fast switching and efficient power management. With a low on-resistance and high current handling capability, it is ideal for applications requiring reliable power control, such as motor drivers, DC-DC converters, and power supply circuits. Its rugged construction ensures stability even under demanding thermal and electrical conditions.
This MOSFET is widely used in both industrial and hobbyist electronics projects due to its TO-247AC package, which allows easy mounting on heatsinks for enhanced thermal management. Engineers and makers often choose it for high-current switching tasks, where efficiency and durability are critical. It supports various control schemes and can handle high peak currents, making it versatile for automotive, robotics, and general-purpose electronics applications.
Features:
- N-Channel MOSFET.
- Fast switching speed.
- Low on-resistance.
- High current handling capability.
- Rugged TO-247AC package.
- High efficiency for power applications.
Specifications:
| Parameter (Symbol) | Min | Typ | Max | Units | Test Conditions |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (V DSS) | 60 | — | — | V | V GS = 0V, I D = 250µA |
| Breakdown Voltage Temp. Coefficient (ΔV DSS/ΔT J) | — | 0.060 | — | V/°C | Reference to 25°C, I D = 1mA |
| Static Drain-to-Source On-Resistance (R DS(on)) | — | — | 0.028 | Ω | V GS = 10V, I D = 34A |
| Gate Threshold Voltage (V GS(th)) | 2.0 | — | 4.0 | V | V DS = V GS, I D = 250µA |
| Forward Transconductance (g fs) | 17 | — | — | S | V DS = 25V, I D = 34A |
| Drain-to-Source Leakage Current (I DSS) | — | — | 25 | µA | V DS = 60V, V GS = 0V |
| — | — | 250 | µA | V DS = 48V, V GS = 0V, T J = 150°C | |
| Gate-to-Source Forward Leakage (I GSS) | — | — | 100 | nA | V GS = 20V |
| Gate-to-Source Reverse Leakage (I GSS) | — | — | -100 | nA | V GS = -20V |
| Total Gate Charge (Q g) | — | — | 95 | nC | I D = 52A |
| Gate-to-Source Charge (Q gs) | — | — | 27 | nC | V DS = 48V |
| Gate-to-Drain (“Miller”) Charge (Q gd) | — | — | 46 | nC | V GS = 10V |
| Turn-On Delay Time (t d(on)) | — | 19 | — | ns | V DD = 30V |
| Rise Time (t r) | — | 120 | — | ns | I D = 52A |
| Turn-Off Delay Time (t d(off)) | — | 55 | — | ns | R G = 9.1Ω |
| Fall Time (t f) | — | 86 | — | ns | R D = 0.56Ω |
| Internal Drain Inductance (L D) | — | 5.0 | — | nH | Between lead, 6 mm from package and center of die contact |
| Internal Source Inductance (L S) | — | 13 | — | nH | V GS = 0V |
| Input Capacitance (C iss) | — | 2500 | — | pF | V DS = 25V |
| Output Capacitance (C oss) | — | 1200 | — | pF | f = 1.0MHz |
| Reverse Transfer Capacitance (C rss) | — | 200 | — | pF | f = 1.0MHz |
Pinout:
| Pin No. | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls switching of the MOSFET |
| 2 | Drain (D) | Main current path |
| 3 | Source (S) | Current return path |
Footprint:
Applications:
- Motor drivers and controllers.
- DC-DC converters.
- Power supplies.
- Battery management circuits.
- Automotive electronics.
- Robotics and high-power switching projects.
Packages:
- 1x IRFP044 N-Channel Power MOSFET Transistor 60V 57A TO-247AC.
Documents:
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