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IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC
The IRFP054 is a high-power N-Channel MOSFET widely used for efficient switching in power supplies, inverters, and motor control circuits.
45.00 EGP
Buy NowIRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC
The IRFP054 N-Channel Power MOSFET is designed to handle high current loads while maintaining efficient switching performance. It operates by using a voltage-controlled gate to regulate current flow between the drain and source, making it ideal for high-power and fast-switching applications in modern electronic systems.
Encased in a TO-247AC package, the IRFP054 provides excellent thermal dissipation and mechanical strength, allowing reliable operation in demanding environments when paired with proper heat sinking. This device is commonly found in SMPS designs, DC motor controllers, battery-powered systems, and industrial power electronics.
Features:
- N-Channel enhancement-mode MOSFET.
- Designed for high-current power switching.
- Low conduction loss for high efficiency.
- Fast switching response.
- Rugged and reliable construction.
- Suitable for linear and switching applications.
- Through-hole mounting for strong mechanical support.
Specifications:
| Parameter | Min | Typ | Max | Units | Test Conditions |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (V DSS) | 60 | – | – | V | V GS = 0V, I D = 250µA |
| Breakdown Voltage Temperature Coefficient (ΔV DSS/ΔT J) | – | 0.056 | – | V/°C | Reference to 25°C, I D = 1mA |
| Static Drain-to-Source On-Resistance (R DS(on)) | – | – | 0.014 | Ω | V GS = 10V, I D = 54A |
| Gate Threshold Voltage (V GS(th)) | 2.0 | – | 4.0 | V | V DS = V GS, I D = 250µA |
| Forward Transconductance (g fs) | 25 | – | – | S | V DS = 25V, I D = 54A |
| Drain-to-Source Leakage Current (I DSS) | – | – | 25 | µA | V DS = 60V, V GS = 0V |
| – | – | 250 | µA | V DS = 48V, V GS = 0V, T J = 150°C | |
| Gate-to-Source Forward Leakage (I GSS) | – | – | 100 | nA | V GS = 20V |
| Gate-to-Source Reverse Leakage (I GSS) | – | – | -100 | nA | V GS = -20V |
| Total Gate Charge (Q g) | – | – | 160 | nC | I D = 64A |
| Gate-to-Source Charge (Q gs) | – | – | 48 | nC | V DS = 48V |
| Gate-to-Drain (“Miller”) Charge (Q gd) | – | – | 54 | nC | V GS = 10V |
| Turn-On Delay Time (t d(on)) | – | 20 | – | ns | V DD = 30V |
| Rise Time (t r) | – | 160 | – | ns | I D = 64A |
| Turn-Off Delay Time (t d(off)) | – | 83 | – | ns | R G = 6.2Ω |
| Fall Time (t f) | – | 150 | – | ns | R D = 0.45Ω |
| Internal Drain Inductance (L D) | – | 5.0 | – | nH | Between lead, 6 mm from package and center of die contact |
| Internal Source Inductance (L S) | – | 13 | – | nH | V GS = 0V |
| Input Capacitance (C iss) | – | 4500 | – | pF | V DS = 25V |
| Output Capacitance (C oss) | – | 2000 | – | pF | f = 1.0MHz |
| Reverse Transfer Capacitance (C rss) | – | 300 | – | pF | f = 1.0MHz |
Pinout:
| Pin No. | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls MOSFET switching |
| 2 | Drain (D) | Main current conduction path |
| 3 | Source (S) | Current return path |
Footprint:
Applications:
- Switch-mode power supplies (SMPS).
- DC motor drivers and controllers.
- Power inverters and UPS systems.
- Battery management systems.
- High-current DC-DC converters.
- Industrial power control circuits.
Packages:
- 1x IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC.
Documents:
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