IRFP064 N-Channel MOSFET Transistor TO-247 110A-55V-8mΩ

High-current N-channel MOSFET (TO-247AC) with ultra-low on-resistance and rugged design, fast switching for power conversion in industrial systems

55.00 EGP

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SKU:2565101190497
IRFP064 N-Channel MOSFET Transistor TO-247 110A-55V-8mΩ

The IRFP064 is a high-current N-channel MOSFET transistor used as a fast electronic switch or amplifier in power circuits. It is part of a fifth-generation power MOSFET family built with advanced processing techniques, which yields exceptionally low on-state resistance and efficient operation.

The device’s rugged design and fast switching capability make it capable of handling large currents with minimal heat loss, providing efficient and reliable control in demanding systems.

Housed in a TO-247AC package with an isolated mounting hole, the IRFP064 can be securely attached to heat sinks for thermal management and is favored for heavy-duty commercial and industrial power applications.

n practice, the IRFP064 acts like a voltage-controlled switch: a small gate voltage can open or close the path between its drain and source. This allows the MOSFET to rapidly turn on and off large currents in equipment such as power converters or motor drives, improving energy efficiency and system performance.

Features:
  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
Specifications:
Specification Value Unit
Drain-Source Voltage (VDSS): 55 V
Gate-Source Voltage (VGSS): ±20 V
Continuous Drain Current (ID) @ 25 °C: 98 A
Continuous Drain Current (ID) @ 100 °C: 69 A
Pulsed Drain Current (IDM): 390 A
Drain-Source On-State Resistance (RDS(on)) @ VGS=10 V: 0.008 Ω
Power Dissipation (PD) @ 25 °C: 150 W
Single-Pulse Avalanche Energy (EAS): 480 mJ
Repetitive Avalanche Current (IAR): 59 A
Repetitive Avalanche Energy (EAR): 15 mJ
Peak Diode Recovery dV/dt: 4.0 V/ns
Operating Junction / Storage Temp (TJ, Tstg): –55 to +175 °C
Thermal Resistance, Junction–Case (RθJC): 1.0 °C/W
Thermal Resistance, Junction–Ambient (RθJA): 40 °C/W
Applications:
  • High Efficiency Synchronous Rectification.
  • DC-DC Converters.
  • Motor Drives.
  • Uninterruptible Power Supplies (UPS).
  • Power Management Systems.
  • Load Switches.
Package Contents:
  • 1x IRFP064 N-Channel MOSFET Transistor TO-247 (110A-55V-8mΩ)
IRFP064 MOSFET Datasheet

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