IRFP140 N-Channel MOSFET
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Summary of Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High current rating
Benefits
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification level
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
- High current carrying capability
Specifications
| Attribute | Value |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 52mΩ@10V,16A |
| Power Dissipation (Pd) | 140W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | N Channel |
| Input Capacitance (Ciss@Vds) | 1400pF@25V |
| Total Gate Charge (Qg@Vgs) | 94nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |
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