IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Ease of paralleling
- Simple drive requirements
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 200 V |
| Id – Continuous Drain Current: | 30 A |
| Rds On – Drain-Source Resistance: | 75 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 123 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 214 W |
| Configuration: | Single |
| Fall Time: | 33 ns |
| Forward Transconductance – Min: | 17 S |
| Rise Time: | 43 ns |
| Typical Turn-Off Delay Time: | 41 ns |
| Typical Turn-On Delay Time: | 14 ns |
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