IRFP260 200V 50A 40mΩ@28A,10V 300W MOSFET N-Channel TO-247AC
The IRFP260N is a fifth-generation N-channel HEXFET power MOSFET built with advanced process technology. Its primary function is to efficiently switch or control high levels of current and voltage in power electronics circuits. The core achievement of its design is an extremely low on-resistance per unit of silicon area, which is fundamental to its high-performance operation.
This device is engineered not just for efficiency but also for durability in demanding environments. It is characterized by fast switching speeds, which minimize power loss during state transitions. Furthermore, it is fully avalanche rated, meaning it can safely withstand short periods of high voltage stress that exceed its breakdown rating, a key feature for reliability. Its dynamic dv/dt rating ensures robustness against voltage spikes.
Housed in the TO-247AC package, this MOSFET is intended for commercial and industrial applications where high power dissipation is required. The package offers an isolated mounting hole, which simplifies heatsink installation and improves electrical isolation. The device is designed for ease of use, featuring simple drive requirements and being suitable for paralleling in circuits that demand even higher current capability.
Features:
- Advanced Process Technology.
- Dynamic dv/dt Rating.
- 175°C Operating Temperature.
- Fast Switching.
- Fully Avalanche Rated.
- Ease of Paralleling.
- Simple Drive Requirements.
IRFP260 Pin Configuration:
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Specifications:
| Physical | |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Technical | |
| Continuous Drain Current (ID) | 50 A |
| Current Rating | 50 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 40 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Dual Supply Voltage | 200 V |
| Element Configuration | Single |
| Fall Time | 48 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 300 W |
| Min Operating Temperature | -55 °C |
| Termination | Through Hole |
Footprint Diagram:
Applications:
- Switch Mode Power Supplies (SMPS).
- Motor Drives and Controls.
- DC-to-DC Converters.
- Uninterruptible Power Supplies (UPS).
- Automotive Systems (Qualified to AEC-Q101).
Package Contents:
- 1x IRFP260 200V 50A 40mΩ@28A,10V 300W MOSFET N-Channel TO-247AC
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