IRFP460 N-Channel Power MOSFET
The IRFP460 is a Third Generation HEXFET® Power MOSFET from International Rectifier, designed to provide the best combination of fast switching, ruggedized device design, and cost-effectiveness. It features low on-resistance and is housed in a TO-247AC package, which is preferred for commercial-industrial applications.
Features
- Dynamic dv/dt Rating: Optimized for robustness against voltage transients.
- Repetitive Avalanche Rated: Designed to handle repetitive avalanche energy.
- Fast Switching: Suitable for high-frequency switching applications.
- Isolated Central Mounting Hole: Provides superior isolation compared to TO-218.
- Ease of Paralleling: Simplifies circuit design for higher power requirements.
Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 500 | V | – |
| Continuous Drain Current | ID | 20 | A | TC = 25°C |
| Continuous Drain Current | ID | 13 | A | TC = 100°C |
| Pulsed Drain Current | IDM | 80 | A | – |
| Power Dissipation | PD | 280 | W | TC = 25°C |
| Gate-to-Source Voltage | VGS | ±20 | V | – |
| Single Pulse Avalanche Energy | EAS | 960 | mJ | – |
| Static Drain-to-Source On-Resistance | RDS(on) | 0.27 | Ω | Max value |
| Operating Junction Temperature | TJ | -55 to +150 | °C | – |
Applications
- Commercial-industrial applications requiring high power levels.
- Applications requiring fast switching speeds.
Datasheet
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