IRFP4710 N-Channel Power MOSFET Transistor 100V 72A 190W TO-247
High-power IRFP4710 N-Channel MOSFET. 100V, 72A with ultra-low 0.014Ω on-resistance. Perfect for efficient DC-DC converters and motor control.
80.00 EGP
Buy NowIRFP4710 N-Channel Power MOSFET Transistor 100V 72A 190W TO-247
The IRFP4710 is a Power MOSFET housed in a TO-247 package. It is engineered to deliver high efficiency in applications such as DC-DC converters, motor control, and uninterruptible power supplies (UPS). Its key characteristics include a low gate-to-drain charge, which minimizes switching losses, and a fully characterized capacitance that simplifies circuit design. Furthermore, it is fully characterized for avalanche voltage and current, ensuring robust performance under demanding conditions.
Features
- Low On-Resistance (RDS(on))
- High Continuous Drain Current (Id)
- High Voltage Rating (VDSS)
- Low Gate Charge (Qg)
- Enhanced dv/dt Capability
- Lead-Free (PbF) Construction
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 100 | V |
| Continuous Drain Current (ID) @ TC = 25°C | 72 | A |
| Continuous Drain Current (ID) @ TC = 100°C | 51 | A |
| Pulsed Drain Current (IDM) | 300 | A |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS = 10V, ID = 45A | 0.014 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3.5 (min), 5.5 (max) | V |
| Total Gate Charge (Qg) (typical) | 110 | nC |
| Power Dissipation (PD) @ TC = 25°C | 190 | W |
| Operating Junction and Storage Temperature Range (TJ, TSTG) | -55 to +175 | °C |
| Package Type | TO-247AC | – |
Applications
- High-Frequency DC-DC Converters
- Motor Control
- Uninterruptible Power Supplies (UPS)
- Switching Regulators
- Audio Amplifiers
DataSheet
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