IRFPC40 600V 6.8A 1.2Ω@4.1A,10V 150W N Channel TO-247-3 MOSFET Transistor
The IRFPC40 N-channel MOSFET transistor is an excellent choice for applications requiring high voltage, fast switching, and low on-resistance.
65.00 EGP
Buy NowIRFPC40 600V 6.8A 1.2Ω@4.1A,10V 150W N Channel TO-247-3 MOSFET Transistor
The IRFPC40 is a high-performance N-channel power MOSFET transistor from Vishay Siliconix. As part of the third generation of power MOSFETs, it delivers fast switching, rugged design, low on-resistance, and cost-effectiveness. Encased in a TO-247-3 package, this transistor is ideal for commercial and industrial applications requiring higher power levels.
Features
- Dynamic dV/dt Rating.
- Repetitive Avalanche Rated.
- Isolated Central Mounting Hole.
- Fast Switching.
- Ease of Paralleling.
- Simple Drive Requirements.
- Lead (Pb)-free Option.
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) at TC = 25°C | 6.8 | A |
| Continuous Drain Current (ID) at TC = 100°C | 4.3 | A |
| Pulsed Drain Current (IDM) | 27 | A |
| Gate-Source Voltage (VGS) | ±20 | V |
| Maximum Power Dissipation (PD) at TC = 25°C | 150 | W |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.1 A | 1.2 | Ω |
| Input Capacitance (Ciss) | 1300 | pF |
| Output Capacitance (Coss) | 160 | pF |
| Reverse Transfer Capacitance (Crss) | 30 | pF |
| Total Gate Charge (Qg) | 60 | nC |
| Gate-Source Charge (Qgs) | 8.3 | nC |
| Gate-Drain Charge (Qgd) | 30 | nC |
| Turn-On Delay Time (td(on)) | 13 | ns |
| Rise Time (tr) | 18 | ns |
| Turn-Off Delay Time (td(off)) | 55 | ns |
| Fall Time (tf) | 20 | ns |
| Operating Temperature Range | -55 to +150 | °C |
| Package | TO-247-3 | – |
Applications
- Switch Mode Power Supplies (SMPS): Efficient high-frequency switching.
- Motor Control: Reliable DC motor operation.
- DC-DC Converters: High-efficiency voltage conversion.
- Inverters: Suitable for grid-tied and off-grid systems.
DataSheet
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