IRFZ42 N-Channel MOSFET Transistor 50V 35A TO-220

The IRFZ42 is an N-channel MOSFET in a TO-220 package, offering low RDS(on), fast switching, and high-temperature reliability for power control applications.

18.00 EGP

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IRFZ42 N-Channel MOSFET Transistor 50V 35A TO-220

The IRFZ42 is an N-channel power MOSFET transistor designed for high-efficiency switching applications. It is built using advanced polysilicon gate technology, which provides it with high durability and ruggedness. Its compact TO-220 package makes it ideal for use in various electronic devices, offering robust performance in power management and motor control circuits.

This MOSFET features low on-state resistance (RDS(on)), which contributes to its high efficiency. The device can handle high continuous drain currents, and its improved switching speed makes it suitable for high-frequency applications. The gate charge characteristics are optimized for fast switching, making it a reliable component for power converters and high-speed circuits.

With a wide operating temperature range from -55°C to 175°C, the IRFZ42 is built for use in harsh environments. Its enhanced safe operating area ensures it can handle overloads and transient spikes without compromising performance. Its thermal management features, such as a low thermal resistance, ensure it operates efficiently even under high power conditions.

Features:
  • Lower RDS(on) for improved efficiency.
  • Fast switching times, suitable for high-frequency applications.
  • Rugged polysilicon gate cell structure.
  • Low input capacitance for improved switching behavior.
  • High thermal reliability and safe operating area.
  • High inductive ruggedness.
  • Extended high-temperature performance.
  • Gate-source voltage withstands up to ±20V.
Specifications:
Parameter Symbol Value Unit
Drain-Source Voltage: VDS 50 V
Continuous Drain Current (Tc=25°C): ID 35 A
On-State Resistance: RDS(on) 0.035 Ω
Gate Threshold Voltage: VGS(th) 2.0-4.0 V
Total Gate Charge: Qg 100 nC
Input Capacitance: Ciss 2450 pF
Output Capacitance: Coss 740 pF
Reverse Transfer Capacitance: Crss 360 pF
Turn-On Delay Time: td(on) 32 ns
Rise Time: tr 210 ns
Turn-Off Delay Time: td(off) 75 ns
Fall Time: tf 130 ns
Junction-to-Case Thermal Resistance: RθJC 1.0 K/W

Pinout:

Pin Name Function
1 Gate (G) Gate drive input
2 Drain (D) Drain (also connected to metal tab)
3 Source (S) Source / return
Applications:
  • Power Supply Units.
  • Motor Control Systems.
  • High-Efficiency Power Converters.
  • Audio Amplifiers.
  • LED Drivers.
  • Switching Regulators.
Packages:
  • 1x IRFZ42 N-Channel MOSFET Transistor 50V 35A TO-220.
Documents:
IRFZ42 Datasheet
Weight 10 g
Dimensions 15 × 5 × 40 mm

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