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K1363 N-Channel MOSFET Transistor 8A 900V
30.00 EGP
Specifications
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 8 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 120 nC
- Rise Time (tr): 25 nS
- Drain-Source Capacitance (Cd): 180 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
K1363 Datasheet
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